The　quest　for　pragmatic　room-temperature　(RT)　magnetic　semiconductors　(MSs)　with　a　suitable　bandgap　constitutes　one　of　the　contemporary　opportunities　to　be　exploited.　This　may　provide　a　materials　platform　for　to　bring　new-generation　ideal　information　device　technologies　into　real-world　applications　where　the　otherwise　conventionally　separately　utilized　charge　and　spin　are　simultaneously　exploited.　Here　we　present　RT　ferromagnetism　in　an　Fe-doped　SnSe　(Fe:SnSe)　van　der　Waals　(vdW)　single　crystalline　ferromagnetic　semiconductor　(FMS)　with　a　semiconducting　bandgap　of　∼1.19　eV　(comparable　to　those　of　Si　and　GaAs).　The　synthesized　Fe:SnSe　single　crystals　feature　a　dilute　Fe　content　of　2　as　the　dopant　precursor　whose　melting　point　is　low　with　respect　to　crystal　growth,　and　which　in　principle　possesses　industrially　unlimited　scalability.　Our　work　adds　a　new　member　in　the　family　of　long-searching　RT　magnetic　semiconductors,　and　may　establish　a　generalized　strategy　for　large-volume　production　of　related　DMSs.　©　2023　Elsevier　Ltd