StakPak　insulated　gate　bipolar　transistor　(IGBT)　modules,　which　have　complex　internal　structures　and　double-sided　heat　dissipation　characteristics,　represent　a　complex　physical　environment　with　multi-physical　field　coupling　under　normal　working　conditions.　This　makes　it　difficult　to　provide　an　accurate　evaluation　of　the　important　reliability　parameters　of　the　devices　contained　in　these　modules,　such　as　the　device　thermal　resistance　and　junction　temperature.　In　this　paper,　ANSYS　software　is　used　to　model　and　perform　a　finite　element　analysis　of　single-chip　StakPak　IGBT　modules.　The　heat　flux　ratio　between　the　collector　and　emitter　of　the　IGBT　chip　is　calculated　via　a　simulation;　the　overall　power　consumption　of　the　module　is　then　divided　into　two　parts,　and　the　thermal　resistance　values　of　the　two　electrodes,　the　overall　temperature　and　the　stress　distribution　of　the　IGBT　chip　and　the　StakPak　device　are　simulated　and　calculated.　The　relationship　between　the　heat　dissipation　ratio　of　the　two　electrodes　and　the　thermal　resistance　is　studied　with　respect　to　pressure,　temperature　and　other　factors.　©　2021　IEEE.