This　paper　proposes　a　novel　4H-SiC　diode　-　-accumulation-mode　MOS　channel　diode　(AMMCD).　Theoretical　analyses　of　the　operation　principle　of　the　AMMCD　are　carried　out.　The　parameters　of　the　AMMCD　are　optimized　by　Sentaurus　TCAD　tools.　Finally,　the　4H-SiC　AMMCD　with　low　forward　voltage　drop　(VF)　and　reverse　leakage　current　(IR)　is　obtained.　Compared　with　4H-SiC　super　barrier　rectifier　(SBR)　and　junction　barrier　Schottky　diode　(JBS)　with　the　same　breakdown　voltage　(650　V),　the　AMMCD　proposed　in　this　paper　has　superior　static　electrical　characteristics.　In　addition,　the　current　and　electric　field　profiles　of　4H-SiC　SBR　and　AMMCD　are　analyzed　as　well.　©　2020　ACM.