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Abstract：
A novel on-the-fly repetitive short circuit (RSC) ageing system under different gate-source voltage bias (VGS) is designed. The static behaviors of SiC planar-gate MOSFET C2M0080120D and SiC trench-gate MOSFET SCT3080KL under the low and high VGS biases RSC ageing are quantitatively and experimentally compared for the first time. A bidirectional threshold voltage shift with different degradation rates in both types of devices is observed. The smaller change of SiC trench-gate MOSFET SCT3080KL is observed compared to SiC planar-gate MOSFET C2M0080120D under low and high VGS biases RSC ageing. © 2020 IEEE.
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Year： 2020
Language： English
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WoS CC Cited Count： 0
SCOPUS Cited Count： 4
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 3
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