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Author:

Chen, Yuanjun (Chen, Yuanjun.) | Ji, Shufang (Ji, Shufang.) | Sun, Wenming (Sun, Wenming.) | Lei, Yongpeng (Lei, Yongpeng.) | Wang, Qichen (Wang, Qichen.) | Li, Ang (Li, Ang.) (Scholars:李昂) | Chen, Wenxing (Chen, Wenxing.) | Zhou, Gang (Zhou, Gang.) | Zhang, Zedong (Zhang, Zedong.) | Wang, Yu (Wang, Yu.) | Zheng, Lirong (Zheng, Lirong.) | Zhang, Qinghua (Zhang, Qinghua.) | Gu, Lin (Gu, Lin.) | Han, Xiaodong (Han, Xiaodong.) (Scholars:韩晓东) | Wang, Dingsheng (Wang, Dingsheng.) | Li, Yadong (Li, Yadong.)

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Abstract:

It is highly desirable but challenging to optimize the structure of photocatalysts at the atomic scale to facilitate the separation of electron-hole pairs for enhanced performance. Now, a highly efficient photocatalyst is formed by assembling single Pt atoms on a defective TiO2 support (Pt-1/def-TiO2). Apart from being proton reduction sites, single Pt atoms promote the neighboring TiO2 units to generate surface oxygen vacancies and form a Pt-O-Ti3+ atomic interface. Experimental results and density functional theory calculations demonstrate that the Pt-O-Ti3+ atomic interface effectively facilitates photogenerated electrons to transfer from Ti3+ defective sites to single Pt atoms, thereby enhancing the separation of electron-hole pairs. This unique structure makes Pt-1/def-TiO2 exhibit a record-level photocatalytic hydrogen production performance with an unexpectedly high turnover frequency of 51423h(-1), exceeding the Pt nanoparticle supported TiO2 catalyst by a factor of 591.

Keyword:

surface defect engineering single atoms platinum atomic interfaces photocatalytic hydrogen production

Author Community:

  • [ 1 ] [Chen, Yuanjun]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
  • [ 2 ] [Ji, Shufang]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
  • [ 3 ] [Zhang, Zedong]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
  • [ 4 ] [Wang, Dingsheng]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
  • [ 5 ] [Li, Yadong]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
  • [ 6 ] [Sun, Wenming]China Agr Univ, Coll Sci, Beijing 100193, Peoples R China
  • [ 7 ] [Lei, Yongpeng]Cent S Univ, Coll Chem & Chem Engn, State Key Lab Powder Met, Changsha 410083, Peoples R China
  • [ 8 ] [Wang, Qichen]Cent S Univ, Coll Chem & Chem Engn, State Key Lab Powder Met, Changsha 410083, Peoples R China
  • [ 9 ] [Lei, Yongpeng]Cent S Univ, Coll Chem & Chem Engn, Hunan Prov Key Lab Chem Power Sources, Changsha 410083, Peoples R China
  • [ 10 ] [Wang, Qichen]Cent S Univ, Coll Chem & Chem Engn, Hunan Prov Key Lab Chem Power Sources, Changsha 410083, Peoples R China
  • [ 11 ] [Li, Ang]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100024, Peoples R China
  • [ 12 ] [Han, Xiaodong]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100024, Peoples R China
  • [ 13 ] [Chen, Wenxing]Beijing Inst Technol, Sch Mat Sci & Engn, Mat & Green Applicat, Beijing 100081, Peoples R China
  • [ 14 ] [Zhou, Gang]Hubei Univ Technol, Sch Sci, Wuhan 430068, Peoples R China
  • [ 15 ] [Wang, Yu]Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
  • [ 16 ] [Zheng, Lirong]Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing, Peoples R China
  • [ 17 ] [Zhang, Qinghua]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
  • [ 18 ] [Gu, Lin]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Reprint Author's Address:

  • [Wang, Dingsheng]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China;;[Li, Yadong]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China;;[Lei, Yongpeng]Cent S Univ, Coll Chem & Chem Engn, State Key Lab Powder Met, Changsha 410083, Peoples R China;;[Lei, Yongpeng]Cent S Univ, Coll Chem & Chem Engn, Hunan Prov Key Lab Chem Power Sources, Changsha 410083, Peoples R China;;[Zhou, Gang]Hubei Univ Technol, Sch Sci, Wuhan 430068, Peoples R China

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Source :

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

ISSN: 1433-7851

Year: 2020

Issue: 3

Volume: 59

Page: 1295-1301

1 6 . 6 0 0

JCR@2022

ESI Discipline: CHEMISTRY;

ESI HC Threshold:139

Cited Count:

WoS CC Cited Count: 446

SCOPUS Cited Count: 411

ESI Highly Cited Papers on the List: 34 Unfold All

  • 2025-5
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  • 2025-1
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  • 2024-3
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  • 2023-11
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  • 2022-11
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  • 2022-1
  • 2021-11
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  • 2021-5
  • 2021-3
  • 2021-1
  • 2020-11
  • 2020-9
  • 2020-7

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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