In　crystalline　silicon　(c-Si)　solar　cells,　the　hole　transport　layer　(HTL)　made　of　high　oxygen　content　MoOx　(x　＞　2.85,　H-MoOx)　evaporating　from　molybdenum　trioxide　is　not　ideal　due　to　low　optical　bandgap　and　interface　reaction　effects.　This　limits　the　power　conversion　efficiency　(PCE)　and　stability　of　c-Si　solar　cells.　To　improve　this,　low　oxygen　content　MoOx　(x　＜　2.85,　L-MoOx)　with　a　wide　bandgap　of　3.87　eV,　deposited　using　molybdenum　dioxide　(MoO2),　is　explored　and　implemented.　The　c-Si/SiOx　(FGA,　forming　gas　annealing)/L-MoOx　heterojunction　has　a　low　contact　resistivity　of　approximate　to　15.06　m　Omega　cm(2),　which　is　almost　one　order　of　magnitude　lower　than　that　of　c-Si/SiOx(FGA)/H-MoOx　heterojunction.　Using　L-MoOx　as　the　HTL,　a　c-Si　solar　cell　based　on　the　SiOx　passivation　layer　shows　a　fill　factor　of　84.38%　and　PCE　of　21.75%,　representing　the　highest　efficiency　for　MoOx-based　p-type　c-Si　solar　cells.　Scanning　transmission　electron　microscopy　results　show　that　the　L-MoOx　HTL　effectively　enhances　the　stability　of　c-Si　solar　cells　when　exposed　to　air　by　reducing　Ag　and　Si　element　diffusion　into　MoOx.　This　successful　preparation　of　efficient　and　stable　MoOx　HTL　films,　while　preserving　their　field-effect　passivation　ability,　provides　valuable　insights　into　the　development　of　high-performance　HTL.