As　a　common　impurity,　H　plays　a　role　in　tuning　the　electrical　properties　of　beta-Ga2O3　and　has　attracted　immense　interest.　Despite　years　of　investigations,　the　influence　of　H-doping　on　electrical　properties　is　not　always　clear　due　to　the　lack　of　comprehensive　characterization　on　both　micro-　and　macro　scale.　In　this　work,　we　investigate　the　effects　of　the　H-plasma　treatment　on　the　electrical　properties　of　beta-Ga2O3　films　by　combining　several　techniques,　from　macroscale　Hall　and　photoluminescence　measurements　to　microscale　conductive　atomic　force　microscopy　(CAFM)　and　Kelvin　probe　force　microscopy　(KPFM).　The　incorporation　of　H　in　beta-Ga2O3　not　only　introduces　shallow　donor　states　such　as　H-i,　but　also　passivates　V-Ga　defects　by　forming　the　V-Ga-4H　complex.　As　a　result,　both　the　carrier　concentration　and　mobility　of　H-doped　beta-Ga2O3　film　are　significantly　increased,　corresponding　to　an　enhancement　of　conductivity　by　four　orders　of　magnitude　in　comparison　with　the　intrinsic　one.　These　results　correlate　well　with　the　local　conductivity　and　surface　potential　mappings　obtained　from　CAFM　and　KPFM.　Moreover,　we　found　that　the　work　function　of　beta-Ga2O3　thin　films　can　also　be　tuned　by　the　H-plasma　treatment.