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Author:

Chen, Zihuan (Chen, Zihuan.) | Duan, Wenyan (Duan, Wenyan.) | Zhang, Dongyun (Zhang, Dongyun.) | Wang, Xuye (Wang, Xuye.) | Li, Tao (Li, Tao.) | Zhao, Chunyang (Zhao, Chunyang.) | Li, Quan (Li, Quan.) | Li, Shan (Li, Shan.) | Liu, Bingshan (Liu, Bingshan.) | Wang, Gong (Wang, Gong.)

Indexed by:

EI Scopus SCIE

Abstract:

Vat photopolymerization 3D printing of Si3N4 ceramics has attracted great attention recently. To overcome the low curing depth limitation caused by alpha-Si3N4, beta-Si3N4 with low absorbance and large particle size was selected in this paper. After printing, the effects of pressureless sintering temperatures on mechanical and dielectric properties were systematically investigated. At 1800 degrees C, the real permittivity of Si3N4 ceramics was 7.37, and the maximum bending strength was 367 +/- 75 MPa. Considering the application of Si3N4 ceramics in radomes/ windows, the dielectric constant of Si3N4 ceramics should be further reduced. Therefore, the octet-truss lattice structure was introduced to optimize the porosity of ceramics. As the porosity increased from 25% to 36%, the real permittivity decreased from 5.56 to 4.42, and the bending strength ranged from 98 +/- 7-62 +/- 13 MPa. It shows that vat photopolymerization 3D printing can be a promising technology for the fabrication of wavetransparent Si3N4 ceramics.

Keyword:

Vat photopolymerization Sintering temperature Octet -truss lattice structure Si 3 N 4 ceramics Broadband wave -transparent ceramics

Author Community:

  • [ 1 ] [Chen, Zihuan]Beijing Univ Technol, Inst Laser Engn, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Dongyun]Beijing Univ Technol, Inst Laser Engn, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 3 ] [Zhao, Chunyang]Beijing Univ Technol, Inst Laser Engn, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 4 ] [Duan, Wenyan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 5 ] [Li, Tao]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 6 ] [Li, Shan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 7 ] [Liu, Bingshan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 8 ] [Wang, Gong]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 9 ] [Wang, Xuye]Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
  • [ 10 ] [Li, Quan]Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 211816, Jiangsu, Peoples R China
  • [ 11 ] [Duan, Wenyan]Chinese Acad Sci, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China

Reprint Author's Address:

  • [Zhang, Dongyun]Beijing Univ Technol, Inst Laser Engn, Fac Mat & Mfg, Beijing 100124, Peoples R China;;[Duan, Wenyan]Chinese Acad Sci, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China;;

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Source :

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

ISSN: 0955-2219

Year: 2023

Issue: 4

Volume: 44

Page: 2026-2036

5 . 7 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 12

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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