To　solve　the　performance　degradation　of　voltage-controlled　magnetic　anisotropy　magnetic　tunnel　junction　(VCMA-MTJ)　and　its　reading　circuit　caused　by　soft　breakdown‚　a　modified　electrical　model　of　VCMA-MTJ　was　established　based　on　the　soft　breakdown　mechanism‚　and　a　VCMA-MTJ　reading　circuit　with　a　fixed　reference　resistance　and　a　VCMA-MTJ　reading　circuit　with　a　reference　resistance　control　unit　were　designed　to　study　the　effect　of　soft　breakdown　on　the　resistance　Rt‚　tunnel　magneto-resistance　ratio　M‚　and　soft　breakdown　time　Ts　of　VCMA-MTJ　as　well　as　the　read　error　rate　of　the　VCMA-MTJ　reading　circuit.　Results　show　that　both　Rt　and　M　decrease　with　the　increase　of　the　stress　time　t　due　to　the　soft　breakdown.　Ts　increases　slowly　with　the　increase　of　the　thickness　of　the　oxide　layer　tox　and　decreases　rapidly　with　the　increase　of　the　pulse　voltage　Vb.　Ts　in　the　parallel　state　is　shorter　than　that　in　the　anti-parallel　state‚　and　it　takes　less　time　for　the　VCMA-MTJ　in　the　parallel　state　to　reduce　M　by　50%　.　The　error　rate　of　reading　“0”　in　the　VCMA-MTJ　reading　circuit　with　fixed　reference　resistance　can　be　effectively　avoided.　However‚　the　error　rate　of　reading　“1”　increases　with　the　increase　of　t.　The　VCMA-MTJ　reading　circuit　with　reference　resistance　control　unit　can　not　only　keep　the　correctness　of　reading　“0”‚　but　also　effectively　improve　the　error　rate　of　reading　“1”　by　up　to　54%　‚　showing　the　ability　to　weaken　the　effect　of　the　soft　breakdown　on　the　VCMA-MTJ　reading　circuit　to　a　certain　extent.　©　2024　Beijing　University　of　Technology.　All　rights　reserved.