Scanning　electron　microscope,　atomic　force　microscope　and　other　equipment　play　an　important　role　in　the　fields　of　topography　restoration　and　detection.　However,　these　devices　are　generally　used　in　nanometer-scale　measurement　scenarios.　For　wafer　topography　quality　control　scenarios　ranging　from　microns　to　hundreds　of　microns,　these　technologies　have　problems　such　as　high　cost　and　slow　detection　speed.　Therefore,　developing　new,　low-cost,　and　high-precision　methods　is　necessary.　To　address　this　problem,　a　wafer　surface　reconstruction　framework　is　proposed　based　on　the　shape-from-focus　principle.　In　view　of　the　characteristics　of　the　large　area　and　micro-small　height　of　the　wafer,　to　solve　the　limitations　of　the　existing　shape　from　focus　framework,　which　is　generally　based　on　a　single　field,　we　created　a　multi-field　image　sequence　rapid　acquisition　system　and　proposed　the　use　of　pulse　control　methods　to　achieve　rapid　acquisition　of　large　area　images.　On　the　other　hand,　this　paper　proposes　a　dual　filtering　framework　combining　the　Levy　flight　filtering　principle　with　the　SOR　algorithm　in　point　cloud　filtering　to　achieve　a　balance　between　smoothing　the　depth　map　and　maintaining　the　detailed　structure,　reducing　the　impact　of　noise,　and　improving　the　morphology　restoration　accuracy.　To　avoid　splicing　seams　between　fields,　the　progressive　detection　multifield　stitching　technique　is　used　to　complete　large-area　depth　data　stitching.　Experiments　were　conducted　on　both　synthetic　and　real　objects　to　verify　the　effectiveness　of　the　proposed　method.　In　terms　of　synthesized　images,　the　accuracy　of　the　three　methods　significantly　improved　after　applying　the　proposed　method　framework.　After　applying　the　Tenenbaum　method　framework,　its　correlation　and　peak　signal-to-noise　ratio　improved　by　7.5%　and　38.2%,　respectively,　and　its　root　mean　square　error　was　reduced　by　40.7%.　The　excellent　accuracy　reconstruction　results　of　the　proposed　method　was　verified　through　accuracy　evaluation　experiments.　The　height　errors　of　the　three　methods　used　were　all　higher　than　1~\mu　\text{m}.　However,　after　using　the　proposed　method　framework,　the　maximum　error　was　only　0.24~\mu　\text{m}.　The　experimental　results　indicated　that　this　method　overcomes　the　area　limitation　of　traditional　SFF　and　is　suitable　for　applying　wafer　surface　morphology　measurements.　©　2013　IEEE.