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Author:

Gao, Mang-Mang (Gao, Mang-Mang.) | Xue, Zi-Wen (Xue, Zi-Wen.) | Li, Jin (Li, Jin.) | Dong, Fa-Yun (Dong, Fa-Yun.) | Liang, Sen (Liang, Sen.) | Li, Hai-Bo (Li, Hai-Bo.) | Wang, Li (Wang, Li.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

The heater configuration and the convective behavior of silicon melt in the vacuum induction melting furnace used for preparing solar-grade casting quasi-single crystal silicon was analyzed by the commercial CG-Sim software. The results show that the electromagnetic force is one of the driving forces to convection. Meanwhile, both strength and distribution of the electromagnetic force are influenced strongly by the ratio of induction coil height to melt depth (defined to k). As k value is 1.2, melt convection develops from two vortexes to one dominating vortex, which is benefit to the impurities evaporation. At the same time, for the inductive frequency within the range from 3000 Hz to 5000 Hz, the flow strength decreases which can increase the thickness of boundary layer between silicon melt and silica crucible, resulting in the deceasing of oxygen concentration in silicon melt. ©, 2015, Chinese Ceramic Society. All right reserved.

Keyword:

Melting furnaces Single crystals Vacuum furnaces Crystal impurities Silicon Vacuum applications Melting Vortex flow Silicon wafers Boundary layers

Author Community:

  • [ 1 ] [Gao, Mang-Mang]College of Applied Sciences, Beijing University of Technology, Beijing, China
  • [ 2 ] [Gao, Mang-Mang]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 3 ] [Xue, Zi-Wen]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 4 ] [Li, Jin]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 5 ] [Dong, Fa-Yun]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 6 ] [Liang, Sen]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 7 ] [Li, Hai-Bo]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 8 ] [Wang, Li]College of Applied Sciences, Beijing University of Technology, Beijing, China

Reprint Author's Address:

  • [li, jin]key laboratory of photovoltaic materials for ningxia, ningxia university, yinchuan, china

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Source :

Journal of Synthetic Crystals

ISSN: 1000-985X

Year: 2015

Issue: 7

Volume: 44

Page: 1941-1945

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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