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Author:

Sui, Y. (Sui, Y..) | Zhou, W. (Zhou, W..) | Khan, D. (Khan, D..) | Wang, S. (Wang, S..) | Zhang, T. (Zhang, T..) | Yu, G. (Yu, G..) | Huang, Y. (Huang, Y..) | Yang, X. (Yang, X..) | Chang, K. (Chang, K..) | He, Y. (He, Y..) | Chen, X. (Chen, X..) | Chen, W. (Chen, W..) | Tang, J. (Tang, J..) | Yang, F. (Yang, F..) | Han, P. (Han, P..) | Yan, H. (Yan, H..) | Zheng, Z. (Zheng, Z..) | Tang, Z. (Tang, Z..)

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Scopus

Abstract:

Inverted p-i-n structure perovskite solar cells (PSCs) have attracted considerable attention in consideration of high-efficiency, long-term stability, and cost reduction, which represent the key challenges in advancing the commercialization of PSCs. In order to address the issue of defect-related nonradiative recombination, we enhanced the interfacial passivation between the perovskite layer and electron transfer layer with crown ether derivatives in p-i-n PSCs. By a combination of first-principles calculations, photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra, and grazing-incidence wide-angle X-ray scattering (GIWAXS) characterization, we provided an understanding of the passivation mechanism and obtained an efficiency of 23.3% in NiOx-based p-i-n PSCs, which lowered the nonradiative recombination with 25% of the voltage losses. Furthermore, the unencapsulated PSCs kept 92% of the initial efficiency following 1224 h of aging, which demonstrated remarkable long-term stability. The inverted structure with interfacial passivation could provide great potential for high-efficiency and stable PSC designs and promote the commercialization of PSCs. © 2024 American Chemical Society.

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Author Community:

  • [ 1 ] [Sui Y.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 2 ] [Sui Y.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Zhou W.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 4 ] [Zhou W.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Khan D.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 6 ] [Wang S.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 7 ] [Wang S.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Zhang T.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Yu G.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 10 ] [Huang Y.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 11 ] [Yang X.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 12 ] [Yang X.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 13 ] [Chang K.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 14 ] [He Y.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 15 ] [Chen X.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 16 ] [Chen W.]Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, College of Engineering Physics, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 17 ] [Tang J.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 18 ] [Yang F.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 19 ] [Han P.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China
  • [ 20 ] [Yan H.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 21 ] [Zheng Z.]Faculty of Materials and Manufacturing, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 22 ] [Tang Z.]College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Shenzhen, Pingshan, 518118, China

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Source :

ACS Energy Letters

ISSN: 2380-8195

Year: 2024

Issue: 4

Volume: 9

Page: 1518-1526

2 2 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 21

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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