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Author:

Zeng, L. (Zeng, L..) | Zhang, S. (Zhang, S..) | Meng, J. (Meng, J..) | Chen, J. (Chen, J..) | Jiang, J. (Jiang, J..) | Shi, Y. (Shi, Y..) | Huang, J. (Huang, J..) | Yin, Z. (Yin, Z..) | Wu, J. (Wu, J..) | Zhang, X. (Zhang, X..)

Indexed by:

EI Scopus SCIE

Abstract:

Solid-state quantum emitters are gaining significant attention for many quantum information applications. Hexagonal boron nitride (h-BN) is an emerging host material for generating bright, stable, and tunable single-photon emission with narrow line widths at room temperature. In this work, we present a facile and efficient approach to generate high-density single-photon emitters (SPEs) in mechanically exfoliated h-BN through H- or Ar-plasma treatment followed by high-temperature annealing in air. It is notable that the postannealing is essential to suppress the fluorescence background in photoluminescence spectra and enhance emitter stability. These quantum emitters exhibit excellent optical properties, including high purity, brightness, stability, polarization degree, monochromaticity, and saturation intensity. The effects of process parameters on the quality of quantum emitters were systematic investigated. We find that there exists an optimal plasma power and h-BN thickness to achieve a high SPE density. This work offers a practical avenue for generating SPEs in h-BN and holds promise for future research and applications in quantum photonics. © 2024 American Chemical Society.

Keyword:

quantum emitters point defects plasma treatment spectroscopy mapping hexagonal boron nitride

Author Community:

  • [ 1 ] [Zeng L.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 2 ] [Zeng L.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 3 ] [Zhang S.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 4 ] [Zhang S.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 5 ] [Meng J.]School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Chen J.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 7 ] [Chen J.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 8 ] [Jiang J.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 9 ] [Jiang J.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 10 ] [Shi Y.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 11 ] [Shi Y.]School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 12 ] [Huang J.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 13 ] [Huang J.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 14 ] [Yin Z.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 15 ] [Yin Z.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 16 ] [Wu J.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 17 ] [Zhang X.]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 18 ] [Zhang X.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2024

Issue: 19

Volume: 16

Page: 24899-24907

9 . 5 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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