Most　of　nowadays　light-emitting　diodes　(LEDs)　based　on　gallium　nitride　(GaN)　production　use　sapphire　wafers　as　the　growth　substrate.　However,　sapphire　exhibits　limitations　in　terms　of　electrical　and　thermal　conductivities,　therefore,　GaN　must　be　transferred　to　more　appropriate　substrates　to　fulfill　diverse　requirements.　At　present,　the　transfer　of　GaN　is　mainly　achieved　by　means　of　laser　lift-off　(LLO),　which　uses　pulses　of　UV　laser　light　in　the　nanosecond　range.　In　this　study,　femtosecond　LLO　(fs-LLO)　technique　has　been　used　for　GaN　delamination.　Femtosecond　pulsed　laser　with　a　wavelength　of　800　nm　(1.55　eV),　and　a　pulse　width　of　50　fs　was　utilized　for　conducting　the　laser　lift-off　experiments,　employing　photon　energy　below　the　GaN　band　gap　(3.4　eV).　The　reliance　on　multiphoton　absorption　and　ultrashort　pulses　in　fs-LLO　minimizes　structural　damage　compared　to　conventional　LLO　approaches.　The　effect　of　different　laser　power　and　different　laser　scanning　speeds　on　the　fs-LLO　processing　of　GaN　has　been　studied　in　detail.　Various　characterization　methods,　including　optical　microscopy,　scanning　electron　microscopy,　X-ray　diffraction,　and　photoluminescence　spectroscopy　were　used　to　observe　the　structural　quality　of　the　materials　after　fs-LLO.　The　results　show　that　there　is　less　thermal　damage　on　the　GaN　surface　when　scanned　with　a　smaller　laser　power.　The　scanning　speed　of　the　displacement　stage　affects　the　surface　smoothness　of　the　GaN.　The　outcome　on　the　flexible　tape　yielded　GaN　with　high　surface　quality　with　no　noticeable　degradation.　©　COPYRIGHT　SPIE.　Downloading　of　the　abstract　is　permitted　for　personal　use　only.