A　high-performance　5-junction　cascade　quantum　dot　(QD)　vertical　cavity　surface-emitting　laser　(VCSEL)　with　1.3　mu　m　wavelength　was　designed.　The　characteristics　of　the　QD　as　active　regions　and　tunnel　junctions　are　combined　to　effectively　increase　output　power.　The　photoelectric　characteristics　of　single-junction,　3-junction　cascade,　and　5-junction　cascade　QD　VCSELs　are　compared　at　continuous-wave　conditions.　Results　indicate　that　the　threshold　current　gradually　decreases,　and　the　output　power　and　slope　efficiency　exponential　increase　with　the　increase　of　the　number　of　active　regions.　The　peak　power　conversion　efficiency　of　58.4%　is　achieved　for　the　5-junction　cascade　individual　QD　VCSEL　emitter　with　10　mu　m　oxide　aperture.　The　maximum　slope　efficiency　of　the　device　is　6.27　W/A,　which　is　approximately　six　times　than　that　of　the　single-junction　QD　VCSEL.　The　output　power　of　the　5-junction　cascade　QD　VCSEL　reaches　188.13　mW　at　injection　current　30　mA.　High-performance　multi-junction　cascade　1.3-　mu　m　QD　VCSEL　provides　data　and　theoretical　support　for　the　preparation　of　epitaxial　materials.　(c)　2024　Optica　Publishing　Group