To　explore　the　influence　of　different　processes　on　the　performance　of　flexible　low　temperature　polysilicon　thin　film　transistors,　the　electrical　characteristics　and　trap　characteristics　of　thin　film　transistors　with　three　different　processes　were　compared.　First,　it　measured　the　I-V　characteristic　curve　of　the　device　with　an　instrument,　and　extracted　the　VTH,　S,　and　μ　of　the　device　for　comparison　and　analysis.　Second,　the　trap　was　studied　by　the　transient　current　method,　and　the　transient　current　curve　was　obtained　by　measuring　the　trapping　and　releasing　characteristics　of　the　carrier,　and　the　activation　energy　analysis　obtained　by　changing　the　gate　voltage　and　the　drain　voltage　and　combining　the　detrapping　curve　at　different　temperatures.　Three　traps　at　different　locations　were　achieved　corresponding　to　different　capture　processes.　Results　show　that　the　process　of　sample　A2　improves　the　film　quality,　reduces　the　threshold　voltage　and　off-state　leakage　current　of　the　device,　and　simultaneously　reduces　the　trap　concentration　of　the　gate　oxide　layer;　the　process　of　sample　A4　fills　the　dangling　bonds　in　the　interface　and　channel,　optimizing　device　mobility　and　subthreshold　swing,　while　reducing　the　trap　concentration　at　interfaces　and　grain　boundaries.　©　2024　Beijing　University　of　Technology.　All　rights　reserved.