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Author:

Du, S. (Du, S..) | Su, J. (Su, J..) | Zhou, H. (Zhou, H..) | Zhang, H. (Zhang, H..) | Qiu, P. (Qiu, P..) | Deng, J. (Deng, J..) | Kan, Q. (Kan, Q..) | Xie, Y. (Xie, Y..)

Indexed by:

EI Scopus

Abstract:

We prepare top-emitting 850 nm vertical-cavity surface-emitting laser (VCSEL) with a large oxide-aperture of 11 µm. The temperature-dependence of the output characteristics such as optical output power, threshold current, differential resistance and small-signal modulation bandwidth (f3dB) are investigated. At room temperature, the VCSEL achieves a maximum optical output power of 12.62 mA and a maximum f3dB of 18.5 GHz. With the increase of temperature, the thermal rollover current and the maximum optical output power both decrease. When the temperature rises to 55 ℃, the f3dB of the device remains above 18 GHz. Finally, the modulation current efficiency factor (MCEF) at different temperatures is extracted by linear fitting of the f3dB and the square root of the bias current above the threshold. © 2024 SPIE.

Keyword:

optical interconnects VCSEL high-speed modulation output power temperature stability

Author Community:

  • [ 1 ] [Du S.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Su J.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Zhou H.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 4 ] [Zhang H.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Qiu P.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 6 ] [Deng J.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 7 ] [Kan Q.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 8 ] [Xie Y.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China

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ISSN: 0277-786X

Year: 2024

Volume: 13183

Language: English

Cited Count:

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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