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Author:

Yu, Xin (Yu, Xin.) | Guo, Wei-Ling (Guo, Wei-Ling.) (Scholars:郭伟玲) | Fan, Xing (Fan, Xing.) | Bai, Jun-Xue (Bai, Jun-Xue.) | Cheng, Shun-Bo (Cheng, Shun-Bo.) | Han, Yu (Han, Yu.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

51 V high voltage LED (HV LED) was designed and fabricated. Firstly, the HV LED was tested by large current attack, then the damage reason was analyzed. The key part's thermal parameters distribution model of HV LED was simulated by using finite element analysis software ANSYS, and the steady distribution of temperature was achieved. By analyzing the infrared thermal image, the reason of HV LED failure after large current attack was gotten. The core particle electrode burned at the connection part which was thin and narrow, so the resistance was large. It provided a good reference for the sequence design of more reliable HV LED. Meanwhile, the chips were packaged into white lamp with color temperature of 5000 K and blue lamp, respectively. The thermal resistance of the white lamp was about 4°C/W higher than the blue lamp without phosphor coating, and it was also higher than the conventional 1 W LED. The deep groove structure and numerous interconnected electrode structure of HV LED may be the reason of the thermal performance of high voltage LED worse than the conventional 1 W LED.

Keyword:

III-V semiconductors Thermoanalysis Heat resistance Light emitting diodes Electrodes Gallium nitride

Author Community:

  • [ 1 ] [Yu, Xin]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Guo, Wei-Ling]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Fan, Xing]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Bai, Jun-Xue]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Cheng, Shun-Bo]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Han, Yu]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

Year: 2014

Issue: 2

Volume: 35

Page: 213-217

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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