Aluminum　nitride　(AlN)　is　a　promising　electronic　material　for　high　reliability　electronic　packaging　structures.　Quasi-static　and　dynamic　flexural　tests　have　been　conducted　on　AlN　to　investigate　its　discrete　fracture　property　and　dynamic　flexural　response.　AlN　ceramics　show　complex　discrete　fracture　properties,　including　stochastic　fracture　strength　and　failure　modes,　due　to　the　randomly　distributed　pore　defects　in　the　bulk　material.　A　novel　inhomogeneous　modelling　technique　coupled　to　Monte　Carlo　simulations　was　developed　to　describe　the　fracture　behavior　of　AlN　ceramics.　The　well　comparable　results　between　experimental　observations　and　numerical　simulations　demonstrate　that　the　proposed　numerical　technique　can　not　only　reproduce　the　stochastic　strength　of　AlN,　but　also　mimic　the　real　failure　modes　under　flexural　loading.　The　dynamic　bending　tests　were　conducted　based　on　the　developed　modified　Split　Hopkinson　Pressure　Bar　(SHPB)　device,　which　is　validated　through　finite　element　numerical　simulations.　The　highspeed　photography　technique　and　scanning　electron　microscopy　(SEM)　were　utilized　for　fracture　process　recording　and　fractography　analysis,　identifying　the　flexural　fracture　mechanism　of　AlN　under　different　loading　conditions.　The　flexural　strength　of　AlN　demonstrates　a　nonnegligible　positive　correlation　with　loading　speed.　Post-mortem　fractography　studies　show　that　the　dominant　fracture　mechanism　is　intergranular　fracture　under　quasi-static　loading.　However,　both　the　intergranular　and　transgranular　fracture　mechanisms　play　a　vital　role　in　the　dynamic　failure　process　of　AlN.