Silicon　carbide　(SiC)　as　a　difficult-to-process　material　is　hard　to　achieve　ductile　grinding　completely,　and　is　likely　to　occur　brittle　breakage　with　low　processing　efficiency,　leading　to　its　low　performance,　therefore,　it　is　necessary　to　study　its　removal　mechanism　to　improve　the　processing　quality.　The　removal　mechanism　of　single　grit　cutting　is　well　understood.　In　the　real　processing　of　SiC,　there　are　multiple　grits　at　different　positions　to　remove　the　materials　simultaneously,　but　the　phenomenon　of　materials　removal　by　multiple　grits　cannot　be　observed　separately.　In　order　to　clarify　the　interference　behavior　of　neighbored　grits,　current　study　conducted　a　neighbored　scratch　experiment　under　varied　force　in　sequence.　The　experiment　evidently　revealed　the　deformation,　pits,　fracture　morphology　and　removal　modes　under　different　interference　conditions.　Since　in-situ　monitor　of　materials　removal　is　unable　to　be　realized,　a　numerical　model　with　different　scratch　intervals　by　coupling　the　smoothed　particle　hydrodynamics　(SPH)　and　finite　element　method　(FEM)　was　used　to　understand　the　material　damage　and　stress　distribution.　Based　on　the　observation　from　experimental　and　SPH-FEM　results,　a　theoretical　model　of　neighbored　scratch　stress　field　is　established　to　explain　the　mechanism　from　plastic　and　fracture　mechanics.　From　the　model,　the　size　of　the　plastic　zone　and　the　interval　between　the　neighbored　plastic　zone　are　critical　to　control　the　interference　mode.　The　interference　mode　affects　the　distribution　of　stress　field　and　realizes　the　enhancement　effect　of　material　removal.　Therefore,　the　materials　removal　model　could　be　adopted　to　control　the　grinding　efficiency　and　quality　in　industry.