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Author:

Qi, Haochun (Qi, Haochun.) | Zhang, Xiaoling (Zhang, Xiaoling.) | Xie, Xuesong (Xie, Xuesong.) | Lü, Changzhi (Lü, Changzhi.)

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EI Scopus CSCD

Abstract:

According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simulates the mono-degradation process of each feature degradation; using the copula function describes the correlation among these feature degradations. The Wiener process and parameters in the copula function are considered to associate with the temperature, and their relationships can be represented by the converted equations. Through the maximum likelihood estimation, the parameters in the Wiener process can be found; introducing Kendall's tau, those in the copula function can be estimated. By conducting the regression analyses of the estimated values of the parameters in each stress, their corresponding converted equations can be shown. Based on the storage test data of bipolar transistors, with the estimation method, the storage lifetime is found. The findings show that the model is reasonable for the prediction of storage lifetime. © 2014 Chinese Institute of Electronics.

Keyword:

Digital storage Regression analysis Maximum likelihood estimation Parameter estimation Random processes Transistors

Author Community:

  • [ 1 ] [Qi, Haochun]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 2 ] [Qi, Haochun]Chinese People's Liberation Army 68129 Troops, Lanzhou, China
  • [ 3 ] [Zhang, Xiaoling]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 4 ] [Xie, Xuesong]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 5 ] [Lü, Changzhi]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

Reprint Author's Address:

  • [qi, haochun]chinese people's liberation army 68129 troops, lanzhou, china;;[qi, haochun]department of electronic information and control engineering, beijing university of technology, beijing, china

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Source :

Journal of Semiconductors

ISSN: 1674-4926

Year: 2014

Issue: 10

Volume: 35

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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