Ta-doped　h-ZnTiO3　(h-ZnTiO3:Ta)　films　with　an　atomic　ratio　of　0-5%　are　grown　on　sapphire　substrates　by　pulsed　laser　deposition.　The　prepared　films　exhibit　n-type　semiconductor　behavior　with　high　epitaxial　crystalline　quality.　These　films　have　high　transparency,　and　their　optical　band　gaps　exceed　3.72　eV.　The　Hall　mobility　and　carrier　concentration　of　the　1%　Ta-doped　film　are　4.6　cm(2)/(Vs)　and　4.20　x　10(14)　/cm(3),　respectively.　The　h-ZnTiO3:Ta　film-based　metal-semiconductor-metal　(MSM)　photodetectors　are　fabricated,　and　their　characteristics　are　analyzed　in　detail.　Among　them,　1%　Ta-doped　h-ZnTiO3　film-based　devices　show　the　best　detection　performance,　including　responsivity　of　4.23　mA/W　and　detectivity　of　1.43　x　10(11)　Jones,　under　the　wavelength　of　308　nm　ultraviolet　light　with　an　optical　density　of　140　mu　W/cm(2).　The　detector　also　has　an　extremely　fast　response　time　(rise　time:　0.16　s　and　fall　time:　0.04　s).　This　work　proves　that　h-ZnTiO3:Ta　epitaxial　films　have　great　application　prospects　in　future　optoelectronic　devices.