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Author:

Du, Zaifa (Du, Zaifa.) | Fang, Aoqi (Fang, Aoqi.) | Tang, Penghao (Tang, Penghao.) | Fan, Xinmin (Fan, Xinmin.) | Sun, Jie (Sun, Jie.) | Guo, Weiling (Guo, Weiling.) (Scholars:郭伟玲) | Wang, Yan (Wang, Yan.) | Zhang, Jianxin (Zhang, Jianxin.)

Indexed by:

EI Scopus SCIE

Abstract:

Nano-light-emitting diodes (LEDs) are ideal for ultra-high resolution displays due to their small size and high pixel density. However, traditional photolithography techniques fall short in meeting the requirements for nanoscale LED fabrication. Besides, as the size decreases and the specific surface area increases, non-radiative recombination generated by sidewalls defects becomes a significant issue, affecting the efficiency of nano-LEDs. To address this challenge, a nano-LED array with a single nanorod size of 800 nm was fabricated in this work by using nanosphere lithography and etching technology. Meanwhile, localized surface plasmons (LSPs) coupling technology was employed to enhance the PL efficiency of these nano-LEDs. By comparing with bare nano-LEDs, the PL intensity was boosted by about 43% and 129% when Ag and Ag@SiO2 nanoparticles were added separately. The existence of LSPs coupling process has been further confirmed through time-resolved photoluminescence measurement and finite element simulation analysis of different samples. The results provide compelling evidence for the LSPs coupling technology in enhancing the efficiency of nanoscale LEDs.

Keyword:

nanorod photoluminescence micro-LED

Author Community:

  • [ 1 ] [Du, Zaifa]Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Peoples R China
  • [ 2 ] [Fan, Xinmin]Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Peoples R China
  • [ 3 ] [Wang, Yan]Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Peoples R China
  • [ 4 ] [Zhang, Jianxin]Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Peoples R China
  • [ 5 ] [Fang, Aoqi]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Tang, Penghao]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Guo, Weiling]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 9 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 10 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden

Reprint Author's Address:

  • 郭伟玲

    [Fan, Xinmin]Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Peoples R China;;[Guo, Weiling]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China;;[Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden

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Source :

JOURNAL OF PHYSICS D-APPLIED PHYSICS

ISSN: 0022-3727

Year: 2025

Issue: 5

Volume: 58

3 . 4 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 13

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