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Author:

Fan, Zhichao (Fan, Zhichao.) | Chen, Shuru (Chen, Shuru.) | Zhu, Hepan (Zhu, Hepan.) | Bai, Shengchuang (Bai, Shengchuang.) | Dai, Shixun (Dai, Shixun.) | Nie, Qiuhua (Nie, Qiuhua.) | Wang, Rongping (Wang, Rongping.) | Li, Pingxue (Li, Pingxue.) | Shiryaev, Vladimir (Shiryaev, Vladimir.) | Wang, Xunsi (Wang, Xunsi.)

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EI Scopus SCIE

Abstract:

Fluorotellurite glass is regarded as an ideal host material for infrared fiber lasers due to its relatively low phonon energy and high rare-earth doping capacity. However, its emission efficiency is limited by strong absorption of hydroxyl impurities (OH−) in the glass, which typically originate from the raw materials and their surrounding environment. In this study, we thoroughly investigated the impact of raw materials and corundum crucible under various conditions. A series of Er3+-doped fluorotellurite glasses was prepared using a high-temperature and low-pressure pre-drying technique, achieving a minimum OH− absorption coefficient of 0.009 cm−1, representing a 99.7 % reduction compared to the undried sample. Moreover, the integral area of peaks at 1550 nm and 2710 nm of the well-dried sample increased by 947 % and 1023 %, respectively, compared to the undried sample. These results demonstrate that fluorotellurite glass with low OH− content holds promising potential for development in infrared fiber lasers. © 2024

Keyword:

Semiconductor doping Glass lasers Infrared drying Glass Rare earth-doped fibers Corundum Fiber lasers

Author Community:

  • [ 1 ] [Fan, Zhichao]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 2 ] [Fan, Zhichao]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 3 ] [Chen, Shuru]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 4 ] [Chen, Shuru]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 5 ] [Zhu, Hepan]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 6 ] [Zhu, Hepan]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 7 ] [Bai, Shengchuang]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 8 ] [Bai, Shengchuang]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 9 ] [Dai, Shixun]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 10 ] [Dai, Shixun]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 11 ] [Nie, Qiuhua]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 12 ] [Nie, Qiuhua]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 13 ] [Wang, Rongping]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 14 ] [Wang, Rongping]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 15 ] [Li, Pingxue]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 16 ] [Shiryaev, Vladimir]G.G. Devyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinin St., Nizhny Novgorod; 603951, Russia
  • [ 17 ] [Wang, Xunsi]Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo; 315211, China
  • [ 18 ] [Wang, Xunsi]Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo; 315211, China
  • [ 19 ] [Wang, Xunsi]Ningbo Institute of Oceanography, Ningbo; 315832, China

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Source :

Journal of Non-Crystalline Solids

ISSN: 0022-3093

Year: 2025

Volume: 650

3 . 5 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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