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Author:

Wu, Ruixue (Wu, Ruixue.) | Ren, Bo (Ren, Bo.) | Wang, Xianda (Wang, Xianda.) | Lin, Jie (Lin, Jie.) | Li, Xiaoxia (Li, Xiaoxia.) | Zheng, Jinlong (Zheng, Jinlong.) | Yang, Hui Ying (Yang, Hui Ying.) | Shang, Yang (Shang, Yang.)

Indexed by:

EI Scopus SCIE

Abstract:

Sodium-ion batteries (SIBs) and potassium-ion batteries (PIBs) have enormous potential for large-scale energy storage due to their cost-effectiveness, safety, and environmental compatibility. Developing high-capacity and highly reliable cathode materials is key to advancing the commercialization of SIBs and PIBs. Low-cost Prussian blue analogs (PBAs), with their open 3D framework and ease of synthesis, are preferred cathode materials for energy storage applications. However, the unique growth mechanism of PBAs introduces numerous Fe(CN)6 vacancies, which compromise structural integrity and result in capacity decay due to structural collapse during long-term electrochemical cycling. Additionally, cracking can cause the dissolution of transition metal (TM) ions, undesirable interfacial reactions, and gas generation, which shorten the battery's lifespan and raise safety concerns. In this review, the mechanisms of growth and vacancy formation in PBAs is first clarified, providing a comprehensive overview of current strategies for vacancy remediation based on both bottom-up and top-down approaches. It is then elucidate how optimized vacancy remediation mechanisms can enhance lattice and interfacial stability, suppress TM dissolution and mitigate gas generation. Finally, it is discussed future research directions and provide perspectives on the further development of high-performance cathode materials for SIBs and PIBs.

Keyword:

vacancies potassium-ion batteries sodium-ion batteries Prussian blue analogs cathode materials crystal growth

Author Community:

  • [ 1 ] [Wu, Ruixue]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Ren, Bo]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Xianda]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Shang, Yang]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Lin, Jie]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, 1219 Zhongguan West Rd, Ningbo 315201, Peoples R China
  • [ 6 ] [Li, Xiaoxia]Beijing Univ Chem Technol, Paris Curie Engineer Sch, Beijing 100029, Peoples R China
  • [ 7 ] [Zheng, Jinlong]Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Ctr Green Innovat, Sch Math & Phys, Beijing 100083, Peoples R China
  • [ 8 ] [Yang, Hui Ying]Singapore Univ Technol & Design, Pillar Engn Prod Dev, Singapore 487372, Singapore

Reprint Author's Address:

  • [Shang, Yang]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China;;[Li, Xiaoxia]Beijing Univ Chem Technol, Paris Curie Engineer Sch, Beijing 100029, Peoples R China;;[Zheng, Jinlong]Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Ctr Green Innovat, Sch Math & Phys, Beijing 100083, Peoples R China;;[Yang, Hui Ying]Singapore Univ Technol & Design, Pillar Engn Prod Dev, Singapore 487372, Singapore;;

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2024

Issue: 13

Volume: 35

1 9 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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