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Author:

Zheng, Cheng-Long (Zheng, Cheng-Long.) | Ni, Pei-Nan (Ni, Pei-Nan.) | Xie, Yi-Yang (Xie, Yi-Yang.) | Genevet, Patrice (Genevet, Patrice.)

Indexed by:

EI Scopus SCIE

Abstract:

Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has profoundly reshaped the modern life with a wide range of applications. In recent decades, semiconductor technology has rapidly evolved from first-generation narrow bandgap materials (Si, Ge) to the latest fourth-generation ultra-wide bandgap semiconductor (GaO, diamond, AlN) with enhanced performance to meet growing demands. Additionally, merging semiconductor devices with other techniques, such as computer assisted design, state-of-the-art micro/nano fabrications, novel epitaxial growth, have significantly accelerated the development of semiconductor optoelectronics devices. Among them, integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response, providing access to previously inaccessible degrees of freedom. We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces, including semiconductor lasers, semiconductor light emitting devices, semiconductor photodetectors, and low dimensional semiconductors. The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices, while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.

Keyword:

semiconductor optoelectronics metasurfaces nanophotonics

Author Community:

  • [ 1 ] [Zheng, Cheng-Long]Zhengzhou Univ, Sch Phys, Henan Key Lab Diamond Optoelect Mat & Devices, Key Lab Mat Phys,Minist Educ, Zhengzhou 450052, Peoples R China
  • [ 2 ] [Ni, Pei-Nan]Zhengzhou Univ, Sch Phys, Henan Key Lab Diamond Optoelect Mat & Devices, Key Lab Mat Phys,Minist Educ, Zhengzhou 450052, Peoples R China
  • [ 3 ] [Xie, Yi-Yang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Genevet, Patrice]Colorado Sch Mines, 1523 Illinois St, Golden, CO 80401 USA

Reprint Author's Address:

  • [Ni, Pei-Nan]Zhengzhou Univ, Sch Phys, Henan Key Lab Diamond Optoelect Mat & Devices, Key Lab Mat Phys,Minist Educ, Zhengzhou 450052, Peoples R China;;[Xie, Yi-Yang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China;;[Genevet, Patrice]Colorado Sch Mines, 1523 Illinois St, Golden, CO 80401 USA

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Source :

OPTO-ELECTRONIC ADVANCES

ISSN: 2096-4579

Year: 2025

Issue: 1

Volume: 8

1 4 . 1 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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