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Author:

Liu, Bo (Liu, Bo.) | Farhadi, Amin (Farhadi, Amin.) | Bartschmid, Theresa (Bartschmid, Theresa.) | Zhang, Yamin (Zhang, Yamin.) | Guo, Chunsheng (Guo, Chunsheng.) | Feng, Shiwei (Feng, Shiwei.) | Bourret, Gilles R. (Bourret, Gilles R..)

Indexed by:

EI Scopus SCIE

Abstract:

The increasing vulnerability of microchips to counterfeiting poses a significant threat to nations, companies, and the general public. Creating a unique "fingerprint" on each chip using intrinsic manufacturing variations can significantly prevent the number of fraudulent chips. Since Si-based semiconductor fabrication processes are now flawless down to a few nanometers, finding a high-entropy source at the nanoscale has become challenging. Inspired by the concept of physical unclonable function, this work reports the CMOS-compatible and lithography-free fabrication of unique nanostructured silicon "fingerprints." Nanostructuring is achieved via low-temperature dewetting and metal-assisted chemical etching, which produces a high level of entropy and unique silicon-based nanoscale fingerprints with linewidths tunable from approximate to 8 to 140 nm, commensurate with the dimensions of mainstream microfabrication processes. These Si nanofingerprints are highly reliable for chip authentication and against reverse engineering, providing a large encoding capacity of up to 216384/mu m2. For practical applications, detection of fingerprints protected with a polymer coating is demonstrated using back-scattered electron imaging.

Keyword:

shapley value physical unclonable function chip anti-counterfeiting dewetting metal-assisted chemical etching

Author Community:

  • [ 1 ] [Liu, Bo]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Yamin]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Guo, Chunsheng]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Feng, Shiwei]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Farhadi, Amin]Univ Salzburg, Dept Chem & Phys Mat, A-5020 Salzburg, Austria
  • [ 6 ] [Bartschmid, Theresa]Univ Salzburg, Dept Chem & Phys Mat, A-5020 Salzburg, Austria
  • [ 7 ] [Bourret, Gilles R.]Univ Salzburg, Dept Chem & Phys Mat, A-5020 Salzburg, Austria

Reprint Author's Address:

  • [Liu, Bo]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China;;[Bourret, Gilles R.]Univ Salzburg, Dept Chem & Phys Mat, A-5020 Salzburg, Austria

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Source :

SMALL

ISSN: 1613-6810

Year: 2025

Issue: 10

Volume: 21

1 3 . 3 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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