Micro　light-emitting　diode　(LED)　is　one　of　the　important　research　directions　in　the　field　of　optoelectronics,　and　transparent　electrodes　with　high　conductivity　and　high　transmittance　play　an　important　role　in　it.　Graphene　has　excellent　physical　and　chemical　properties　and　has　become　one　of　the　most　potential　transparent　electrode　materials.　In　this　paper,　transfer-free　patterned　graphene　transparent　electrodes　were　fabricated　and　applied　to　GaN-based　micro　LEDs.　In　this　scheme,　the　Ni　film　is　used　as　etching　masks　and　graphene　growth　catalysts,　simplifying　the　process　flow　and　growing　patterned　graphene.　The　SiO2　isolation　layer　prevents　the　fusion　of　p-type　GaN　and　Ni　at　600　°C,　protecting　the　integrity　of　GaN　and　the　catalytic　performance　of　Ni.　Both　Ni　and　SiO2　are　removed　by　wet　etching,　and　patterned　graphene　is　prepared　on　the　surface　of　GaN　without　transfer　process.　The　results　show　that　the　multilayer　graphene　achieves　good　current　expansion　and　transparency,　and　the　micro　LEDs　fabricated　exhibits　good　optical　and　electrical　properties.　The　graphene　prepared　by　this　method　avoids　the　potential　damage　to　the　graphene　during　the　transfer　process　and　the　patterning　process,　and　plays　an　excellent　role　as　a　transparent　electrode　on　micro　LEDs.　©2024　IEEE.