For　insulated　gate　bipolar　transistor　(IGBT)　modules　using　wire　bonding　as　the　interconnection　method,　the　primary　failure　mechanism　is　the　cracking　of　the　bonded　interface.　Studying　the　effect　of　the　bonded　interface　damage　on　mechanical　and　electro-thermal　characteristics　is　crucial　for　assessing　the　reliability　of　IGBT　modules.　This　paper　established　these　finite　element　models　of　IGBT　modules　with　different　bonded　areas　and　conducted　a　two-step　indirect　coupling　electro-thermal-mechanical　analysis　under　power　cycling.　The　analysis　results　show　that　the　current　density　and　the　displacement　of　boding　wires　significantly　increase　with　the　increase　of　bonded　interface　damage.　©　VDE　VERLAG　GMBH.