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Author:

Cao, Mingxing (Cao, Mingxing.) | Zhang, Zhigao (Zhang, Zhigao.) | He, Jian (He, Jian.) | Hou, Ruifen (Hou, Ruifen.) | Gong, Wenjie (Gong, Wenjie.) | Wang, Zhihong (Wang, Zhihong.)

Indexed by:

Scopus SCIE

Abstract:

Tungsten telluride (WTe2) and silver telluride (Ag2Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual components and expanding their applications. In this study, previously developed synthesis methods for WTe2 and Ag2Te are applied to effectively engineer WTe2 and Ag2Te bulk composites. Introducing 10% Ag2Te in the WTe2 matrix improves the magnetoresistance and lowers the critical magnetic field and higher onset temperature relative to those of pure-phase WTe2. The relationship between the magnetoresistance performance and Ag2Te content is further explored using simulations. The onset temperature and critical magnetic field follow the Kohler rule based on resistance calculations. The excellent composite magnetoresistance of these materials will find applications in the field of electronics.

Keyword:

silver telluride composite tungsten ditelluride magnetoresistance

Author Community:

  • [ 1 ] [Cao, Mingxing]Natl Inst Metrol, Natl Inst Metrol, Adv Measurement Engn Ctr, Beijing 100029, Peoples R China
  • [ 2 ] [Zhang, Zhigao]Natl Inst Metrol, Natl Inst Metrol, Adv Measurement Engn Ctr, Beijing 100029, Peoples R China
  • [ 3 ] [He, Jian]Natl Inst Metrol, Natl Inst Metrol, Adv Measurement Engn Ctr, Beijing 100029, Peoples R China
  • [ 4 ] [Hou, Ruifen]Natl Inst Metrol, Natl Inst Metrol, Adv Measurement Engn Ctr, Beijing 100029, Peoples R China
  • [ 5 ] [Gong, Wenjie]Natl Inst Metrol, Natl Inst Metrol, Adv Measurement Engn Ctr, Beijing 100029, Peoples R China
  • [ 6 ] [Wang, Zhihong]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Zhang, Zhigao]Natl Inst Metrol, Natl Inst Metrol, Adv Measurement Engn Ctr, Beijing 100029, Peoples R China

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Source :

ADVANCED ELECTRONIC MATERIALS

ISSN: 2199-160X

Year: 2025

6 . 2 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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