This　paper　discusses　the　fatigue　failure　mechanisms　associated　with　the　packaging　of　Insulated　Gate　Bipolar　Transistors　(IGBTs)　and　investigates　the　failure　behavior　of　aluminum　wires　and　die-attached　solder　layers　within　IGBTs.　The　study　utilizes　an　electro-thermal-mechanical　finite　element　model,　temperature　shock　tests,　and　power　cycle　tests.　Using　finite　element　analysis　with　COMSOL　Multiphysics　software,　the　failure　process　of　aluminum　wires　and　solder　layers　in　IGBT　power　modules　was　simulated,　and　the　temperature　and　stress　distribution　of　the　devices　during　the　power　cycle　were　determined.　The　Anand　model　was　employed　to　analyze　the　creep　mechanism　of　the　solder　layer.　Through　Electron　Backscatter　Diffraction　(EBSD)　analysis,　the　macroscopic　failure　behavior　was　correlated　with　the　microstructure,　revealing　the　grain　size　and　grain　boundary　evolution　in　the　crack　tip　region　during　the　crack　propagation　of　the　Al　bonding　wires.　The　research　aims　to　enhance　the　understanding　of　fatigue　failure　mechanisms　and　improve　the　reliability　of　IGBT　devices.