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Author:

Han, Zishuo (Han, Zishuo.) | Xing, Yanhui (Xing, Yanhui.) | Lin, Yu (Lin, Yu.) | Yu, Zhipeng (Yu, Zhipeng.) | Han, Qingchen (Han, Qingchen.) | Zhou, Dong (Zhou, Dong.) | Bian, Lifeng (Bian, Lifeng.) | Zeng, Yuxuan (Zeng, Yuxuan.) | Zhan, Rongbin (Zhan, Rongbin.) | Zhang, Baoshun (Zhang, Baoshun.) | Zeng, Zhongming (Zeng, Zhongming.)

Indexed by:

EI Scopus SCIE

Abstract:

Artificial synapses, basic units of neuromorphic hardware, have been studied to emulate synaptic dynamics, which are beneficial for realizing high-quality neural networks. Currently, two-dimensional (2D) material heterojunction structures are widely used in the study of artificial synapses; however, their dynamic weight-updating characteristics are restricted owing to their high nonlinearity and low symmetricity. In this study, we treated h-BN with oxygen plasma to form a charge-trapping layer (CTL), and we prepared 2D ReS2/CTL/h-BN heterojunction synapses. The device achieves a large memory window and excellent synaptic performance and simulates the adaptive behavior of the human eye through the synergistic modulation of the optoelectronic double pulse. The mechanism of the effect of trap states in CTL on the weight-updating performance was analyzed, and the device was further optimized. In the long-term potentiation/depression (LTP/D) weight-updating characteristic of the device, the nonlinearity was reduced to 0.63 and symmetricity reached 41.25, which is superior to most similar devices reported to date. Therefore, this research provides insights into improving the LTP/D weight-updating performance of synaptic devices.

Keyword:

van der Waals heterojunction artificial synapse LTP/D characteristic 2D materials charge trapping

Author Community:

  • [ 1 ] [Han, Zishuo]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Xing, Yanhui]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Han, Qingchen]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Han, Zishuo]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 5 ] [Lin, Yu]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 6 ] [Yu, Zhipeng]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 7 ] [Han, Qingchen]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 8 ] [Zhou, Dong]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 9 ] [Zeng, Yuxuan]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 10 ] [Zhan, Rongbin]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 11 ] [Zhang, Baoshun]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 12 ] [Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
  • [ 13 ] [Lin, Yu]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China
  • [ 14 ] [Zhang, Baoshun]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China
  • [ 15 ] [Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China
  • [ 16 ] [Bian, Lifeng]Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China

Reprint Author's Address:

  • [Xing, Yanhui]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China;;[Lin, Yu]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China;;[Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China;;[Lin, Yu]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China;;[Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2025

Issue: 12

Volume: 17

Page: 18645-18654

9 . 5 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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