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Author:

Xu, Z. (Xu, Z..) | Yan, Y. (Yan, Y..) | Liu, Z. (Liu, Z..) | Pang, J. (Pang, J..) | Dong, G. (Dong, G..) | Deng, X. (Deng, X..) | Zhang, S. (Zhang, S..) | Zhang, X. (Zhang, X..) | Shi, Y. (Shi, Y..) | Wu, Q. (Wu, Q..)

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Abstract:

Materials featuring hypervalent bismuth motifs have generated immense interest due to their extraordinary electronic structure and exotic quantum transport. In this study, we synthesized high-quality single crystals of La3ScBi5 characterized by one-dimensional hypervalent bismuth chains and performed a systematic investigation of the magnetoresistive behavior and quantum oscillations. The metallic La3ScBi5 exhibits a low-temperature plateau of electrical resistivity and quasi-linear positive magnetoresistance, with anisotropic magnetoresistive behaviors suggesting the presence of anisotropic Fermi surfaces. This distinctive transport phenomenon is perfectly elucidated by first-principles calculations utilizing the semiclassical Boltzmann transport theory. Furthermore, the nonlinear Hall resistivity pointed towards a multiband electronic structure, characterized by the coexistence of electron and hole carriers, which is further supported by our first-principles calculations. Angle-dependent de Haas-van Alphen oscillations are crucial for further elucidating its Fermiology and topological characteristics. Intriguingly, magnetization measurements unveiled a notable paramagnetic singularity at low fields, which might suggest the nontrivial nature of the surface states. Our findings underscore the interplay between transport phenomena and the unique electronic structure of hypervalent bismuthide La3ScBi5, opening avenues for exploring novel electronic applications. © The Author(s) 2025.

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Author Community:

  • [ 1 ] [Xu Z.]Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang, China
  • [ 2 ] [Xu Z.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • [ 3 ] [Xu Z.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 4 ] [Yan Y.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 5 ] [Yan Y.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
  • [ 6 ] [Liu Z.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 7 ] [Liu Z.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
  • [ 8 ] [Pang J.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • [ 9 ] [Pang J.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 10 ] [Dong G.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • [ 11 ] [Dong G.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 12 ] [Deng X.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • [ 13 ] [Deng X.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 14 ] [Zhang S.]Beijing Polytechnic College, Beijing, China
  • [ 15 ] [Zhang X.]Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang, China
  • [ 16 ] [Shi Y.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • [ 17 ] [Shi Y.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 18 ] [Shi Y.]Songshan Lake Materials Laboratory, Dongguan, Guangdong, China
  • [ 19 ] [Wu Q.]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • [ 20 ] [Wu Q.]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
  • [ 21 ] [Wu Q.]Songshan Lake Materials Laboratory, Dongguan, Guangdong, China

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Source :

npj Quantum Materials

ISSN: 2397-4648

Year: 2025

Issue: 1

Volume: 10

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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