Influence of Al composition on electrical and structural properties of AlxGa1-xN/AlN/GaN HEMT materials grown by MOCVD - Details

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Abstract：

AlxGa1-xN/AlN/GaN　high　electron　mobility　transistor　(HEMT)　materials　with　different　Al　compositions　(x=0.19,　0.22,　0.25,　0.32)　were　grown　on　sapphire　substrates　by　metalorganic　chemical　vapor　deposition　(MOCVD).　The　effects　of　Al　composition　on　electrical　and　structural　properties　of　HEMTs　materials　were　analyzed.　It　is　observed　that　two-dimensional　electron　gas　(2DEG)　density　and　mobility　are　improved　with　the　raising　of　Al　content　within　a　certain　range.　However,　too　high　Al　composition　will　make　the　surface　turn　to　be　rougher　and　the　mobility　deteriorate,　which　was　reinforced　by　the　test　results　of　atomic　force　microscopy　(AFM).　The　optimum　Al　content　is　25%.　Based　on　this,　the　HEMT　materials　showed　a　high　2DEG　density　of　1.2×1013　cm-2　with　a　low　sheet　resistance　of　310　Ω/,　and　highly　Hall　mobility　of　1680　cm2/(V·s)　at　room　temperature.

Keyword：

High electron mobility transistors Atomic force microscopy Structural properties III-V semiconductors Sapphire Hall mobility Metallorganic chemical vapor deposition Aluminum gallium nitride Density of gases Electric properties Two dimensional electron gas

Author Community：

[ 1 ] [Chen, Xiang]College of Electronic Information and Control Engineer, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xing, Yan-Hui]College of Electronic Information and Control Engineer, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Han, Jun]College of Electronic Information and Control Engineer, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Huo, Wen-Juan]College of Electronic Information and Control Engineer, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Zhong, Lin-Jian]College of Electronic Information and Control Engineer, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Cui, Ming]College of Electronic Information and Control Engineer, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Fan, Ya-Ming]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-technology and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
[ 8 ] [Zhu, Jian-Jun]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-technology and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
[ 9 ] [Zhang, Bao-Shun]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-technology and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China