Design of 3-6 GHz SiGe HBT cascode low noise amplifier - Details

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Abstract：

Based　on　Jazz　0.35　μm　SiGe　process,　a　SiGe　HBT　low-noise　amplifier　(LNA)　for　UWB　and　IEEE　802.11a　application　is　presented.　The　technology　of　inductive　shunt　peaking　and　cascade　configuration　is　adopted　to　enhance　the　bandwidth.　Finally,　the　chip　layout　is　designed　with　its　area　1.16×0.78　mm2.　For　the　range　of　3-6　GHz　bandwidth,　the　maximum　power　gain　is　26.9　dB,　and　gain　flatness　is　±0.9　dB.　The　input　and　output　match　well,　input　and　output　reflections　(S11　and　S22)　are　both　less　than　-10　dB,　the　input　VSWR　and　output　VSWR　are　both　less　than　1.5,　and　the　1　dB　compression　point　is　-22.9　dBm.　The　LNA　is　unconditionally　stable　in　the　whole　band.

Keyword：

Heterojunctions IEEE Standards Bandwidth Si-Ge alloys Low noise amplifiers Cascode amplifiers Heterojunction bipolar transistors

Author Community：

[ 1 ] [Ding, Chun-Bao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wan-Rong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Xie, Hong-Yun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Shen, Pei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Chen, Liang]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [You, Yun-Xia]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Sun, Bo-Tao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 8 ] [Wang, Ren-Qing]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

Reprint Author's Address：

Email：

chunbaoding@emails.bjut.edu.cn

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Related Keywords：

Design of SiGe HBT UWB low noise amplifier based on Darlington Cascode structure
2012，Chinese High Technology Letters
Design of active match SiGe HBT low noise amplifier employing noise cancellation
2012，Journal of Beijing University of Technology
Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling
2011，2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Design and fabrication of SiGe HBT low noise amplifier
2010，Journal of Electronics and Information Technology

Source ：

Journal of Beijing University of Technology

ISSN： 0254-0037

Year： 2012

Issue： 8

Volume： 38

Page： 1162-1166

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 9

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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