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Author:

Guo, Wei-Ling (Guo, Wei-Ling.) | Li, Rui (Li, Rui.) | Jia, Xue-Jiao (Jia, Xue-Jiao.) | Gao, Wei (Gao, Wei.) | Cui, De-Sheng (Cui, De-Sheng.) | Shen, Guang-Di (Shen, Guang-Di.)

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EI Scopus PKU CSCD

Abstract:

In this paper, the high power GaN-based white and blue light-emitting diodes (LEDs) and AlGaInP-based red and yellow LEDs are fabricated and the electrical and optical properties at low and high temperature are measured. The temperature dependence of forward voltage, relative luminous intensity, wavelength, color temperature of different LEDs are analyzed. Experiment result shows that temperature has great influence on electrical and optical proprieties of high-power LEDs. When the forward voltage increased and peak wavelength blue-shift was observed with decreasing temperature. At high temperature, the optical power of LEDs decreases rapidly and the peak wavelength becames red-shift.

Keyword:

Blue shift Red Shift III-V semiconductors Temperature distribution Gallium nitride Light emitting diodes

Author Community:

  • [ 1 ] [Guo, Wei-Ling]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Li, Rui]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Jia, Xue-Jiao]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Gao, Wei]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Cui, De-Sheng]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Shen, Guang-Di]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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Source :

Journal of Beijing University of Technology

ISSN: 0254-0037

Year: 2011

Issue: 7

Volume: 37

Page: 961-966

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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