This　paper　focused　on　the　modification　properties　of　the　La　2Zr2O7　(LZO)　seed　layers　for　the　epitaxial　growth　of　thick　LZO　buffer　films　on　cube-textured　Ni5%W　(Ni5W)　substrate　by　the　metal　organic　deposition　(MOD)　method.　The　surface　morphologies　of　the　LZO　seed　layers　with　different　precursor　concentrations　were　described　by　SEM.　The　grain　orientation　and　the　crystallographic　growth　model　of　the　LZO　seed　layer　were　characterized　by　the　electron　backscatter　diffraction　(EBSD).　The　XRD　analyses　reveal　that　the　LZO　buffer　layers　on　the　Ni5W　substrates　with　and　without　seed　layers　were　grown　epitaxially.　However,　the　uniformly　distributed　islanded　LZO　seed　layers　with　highly　(001)[110]　rotated　cube　texture　not　only　can　improve　the　crystallinity　of　the　subsequent　LZO　buffer　films,　but　also　can　optimize　the　in-plan　and　out-plan　orientations　of　the　thick　LZO　buffer　layers.　©　2010　IEEE.