Passively mode-locked Yb-doped fiber laser with graphene epitaxially grown on 6H-SiC substrates - Details

Author：

Liu, Jiang (Liu, Jiang.) | Wei, Rusheng (Wei, Rusheng.) | Xu, Jia (Xu, Jia.) | Xu, Xiangang (Xu, Xiangang.) | Wang, Pu (Wang, Pu.) (Scholars：王璞)

Indexed by：

EI Scopus PKU CSCD

Abstract：

We　report　all-normal-dispersion　passively　mode-locked　Yb-doped　fiber　laser　by　graphene　epitaxially　grown　on　6H-SiC　substrates　in　a　ring　cavity　configuration.　Stable　mode-locked　pulses　of　the　fiber　laser　are　obtained　at　about　250　mW　incident　pump　power　and　the　pulse　repetition　rate　is　1.05　MHz;　Increasing　the　incident　pump　power　to　480　mW,　the　average　output　power　is　20　mW,　which　corresponds　to　single　pulse　energy　of　up　to　19　nJ　with　pulse　width　of　about　520　ps.

Keyword：

Graphene Optical pumping Silicon carbide Silicon compounds Lasers Mode-locked fiber lasers Fiber lasers Fibers Ytterbium compounds Pulse repetition rate Passive mode locking

Author Community：

[ 1 ] [Liu, Jiang]Institute of Laser Engineering, National Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wei, Rusheng]State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 3 ] [Xu, Jia]Institute of Laser Engineering, National Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xu, Xiangang]State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 5 ] [Wang, Pu]Institute of Laser Engineering, National Center of Laser Technology, Beijing University of Technology, Beijing 100124, China