This　paper　proposes　an　electrical　method　for　estimation　of　the　vertical　junction　temperature　of　silicon　carbide　bipolar　junction　transistors　(SiC　BJTs).　This　measurement　method　is　based　on　measurement　of　the　base-collector　voltage　(V-BC)　drop　at　a　low　current　(V-BC((low)))　during　the　turn-oFF　process.　This　voltage　shows　both　good　sensitivity　and　linearity　with　respect　to　temperature.　The　traditional　temperature-sensitive　electrical　parameter　V-BE((low))　(i.e.,　the　base-emitter　voltage　at　a　low　current)　and　an　infrared　camera　are　used　to　compare　the　characteristics　of　V-BC((low)).　The　results　show　that　use　of　V-Bc(low)　provides　more　accurate　junction　temperature　and　thermal　resistance　measurement　results,　which　can　then　be　used　to　extract　the　vertical　junction　temperature　of　the　SiC　BJT　under　test.