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Abstract:
This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma. Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs. The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer, and by 17% for an 8 μm GaP window layer. The light-power of the nanorod LED is increased by 25% and 13%, respectively. © 2010 Chinese Institute of Electronics.
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Source :
Journal of Semiconductors
ISSN: 1674-4926
Year: 2010
Issue: 6
Volume: 31
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count: 2
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 6
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