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Author:

Li, Yongli (Li, Yongli.) | Liang, Hailong (Liang, Hailong.) | Zhang, Jiuxing (Zhang, Jiuxing.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

Highly dense AlN/BCN-nt composites with 1%-10% (volume fraction) carbon-doped boron nitride nanotubes (BCN-nt) were fabricated by spark plasma sintering. The results indicate that even though the degradation with incorporation of BCN-nt into AlN, the thermal conductivity of sintered AlN/BCN-nt composites is evidently improved with the growth of AlN grains and the elimination of oxide contamination by increasing sintering temperature. Both the real part and imaginary part of the composites of Ka-Band (26.5-40.0 GHz) increase with the increase of BCN-nt content, in which the increase of imaginary part is more than that of real part, resulting in an increase of loss factor. Increasing sintering temperature does not have obvious impact on the dielectric constant value. However, excessively high sintering temperature (1700°C) leads to damage of the tubular structure of BCN-nt and reduction of imaginary part of the composites. The AlN/BCN-nt composites with appropriate BCN-nt content and sintering temperature possess good dielectric dissipation and thermal conductivity.

Keyword:

Nitrides Fabrication Boron nitride Dielectric properties Nanotubes III-V semiconductors Aluminum nitride Spark plasma sintering Thermal conductivity

Author Community:

  • [ 1 ] [Li, Yongli]Key Laboratory of Advanced Functional Materials, School of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Liang, Hailong]Key Laboratory of Advanced Functional Materials, School of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Zhang, Jiuxing]Key Laboratory of Advanced Functional Materials, School of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China

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Source :

Journal of the Chinese Ceramic Society

ISSN: 0454-5648

Year: 2010

Issue: 8

Volume: 38

Page: 1440-1444

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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