The　light　extraction　efficiency　can　be　efficiently　improved　by　omni　directional　re-flector　(ODR)　in　AlGaInP　light　emitting　diodes.　The　design　and　the　processing　of　ODR　were　optimized;　λ/4n　thick　SiO2　was　adopted　as　medium,　then　photolithography　and　etching　were　processed　to　form　the　micro　contact　holes.　Afterwards,　on　the　condition　of　keeping　photo　resist　AuZnAu　was　sputtered　and　peeled　off.　Finally　300　nm　thick　Au　was　sputtered.　After　annealed,　the　reflectivity　of　ODR　(Au-SiO2-p-GaAs)　can　reach　72%,　higher　8.8%　than　that　of　single　sputtering　ODR　(AuZnAu-SiO2-p-GaAs).　Both　high　reflectivity　and　ohmic　contact　can　be　satisfied　for　LED.