High temperature ferromagnetism and perpendicular magnetic anisotropy in Fe-doped In2O3 films - Details

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Abstract：

High　temperature　ferromagnetism　and　perpendicular　magnetic　anisotropy　were　observed　in　Fe-doped　In2　O3　magnetic　semiconductor　films　deposited　on　R　-cut　sapphire　by　pulse　laser　deposition.　The　films　show　a　Curie　temperature　as　high　as　927　K.　Strong　perpendicular　magnetic　anisotropy　with　a　remnant　magnetization　ratio　of　0.77　and　a　coercivity　of　680　Oe　is　demonstrated.　Extensive　microstructure,　composition,　and　magnetic　studies　indicate　that　Fe　element　incorporates　into　the　indium　oxide　lattice　by　substituting　the　position　of　indium　atoms,　which　suggests　the　observed　ferromagnetism　is　intrinsic　rather　than　from　Fe　clusters　or　any　other　magnetic　impurity　phases.　©　2008　American　Institute　of　Physics.

Keyword：

Magnetic semiconductors Indium Metallic films Ferromagnetism High temperature effects Magnetic anisotropy Microstructure Iron

Author Community：

[ 1 ] [Xing, P.F.]School of Physics and Microelectronics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 2 ] [Chen, Y.X.]School of Physics and Microelectronics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 3 ] [Yan, Shi-Shen]School of Physics and Microelectronics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 4 ] [Liu, G.L.]School of Physics and Microelectronics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 5 ] [Mei, L.M.]School of Physics and Microelectronics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
[ 6 ] [Wang, K.]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022, China
[ 7 ] [Han, X.D.]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022, China
[ 8 ] [Zhang, Z.]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022, China

Reprint Author's Address：

[xing, p.f.]school of physics and microelectronics, national key laboratory of crystal materials, shandong university, jinan, shandong 250100, china

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Source ：

Applied Physics Letters

ISSN： 0003-6951

Year： 2008

Issue： 2

Volume： 92

4 . 0 0 0

JCR@2022

ESI Discipline： PHYSICS;

JCR Journal Grade：1

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 56

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 9

Affiliated Colleges：

材料科学与工程学院本学院/部未明确归属的数据

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