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Abstract：
The content of dopant Ga3+ ion in Ga3+:KTP crystal was measured by ICP-AES method, and the average distribution coefficient in the growth system of Ga3+ was obtained (0.0373). The conductivity along c axis of Ga3+ : KTP crystal was measured by electrometer and multifrequency measurer, and compared with that of the pure KTP crystal. The result shows that the conductivity along c axis of Ga3+:KTP crystal was decreased by more two orders of magnitude vs. that of the pure KTP. The mechanism is discussed in this article.
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Journal of Synthetic Crystals
ISSN： 1000-985X
Year： 2006
Issue： 2
Volume： 35
Page： 378-380
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WoS CC Cited Count： 0
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ESI Highly Cited Papers on the List： 0 Unfold All
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Chinese Cited Count：
30 Days PV： 6
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