Light degradation stability of a-Si:H films - Details

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Abstract：

Various　factors　responsible　for　light　degradation　stability　of　a-Si:H　films,　grown　by　hot　filament　assisted　microwave　electron　synchrotron　resonance　chemical　vapor　deposition　(MWECR　CVD),　were　analyzed　with　Fourier　infrared　spectroscopy　(FTIR)　and　light　degradation　curves.　The　results　show　that　hydrogen　content,　H-Si　bonding　modes　and　hydration　movement　significantly　affect　the　stability　of　a-Si　material.　We　found　that　thin　layer　of　Si　crystalline　micro-grain　grown　on　a-Si　substrate　considerably　improves　the　stability.

Keyword：

Chemical vapor deposition Thin films Fourier transform infrared spectroscopy Solar cells Hydration Photodegradation

Author Community：

[ 1 ] [Ma, Zhanjie]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Chen, Guanghua]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 3 ] [He, Bin]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Guohan]School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
[ 5 ] [Zhu, Xiuhong]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Zhang, Wenli]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Li, Zhizhong]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Gao, Zhihua]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Song, Xuemei]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 10 ] [Deng, Jinxiang]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China

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Related Keywords：

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Source ：

Journal of Vacuum Science and Technology

ISSN： 1672-7126

Year： 2006

Issue： SUPPL.

Volume： 26

Page： 98-100

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

Affiliated Colleges：

材料科学与工程学院本学院/部未明确归属的数据

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