Indexed by：
Abstract：
Using metal organic chemical vapor deposition, we fabricate an InGaAsP/InGaP/AlGaAs single quantum well laser with a separate confinement heterostructure. We calculate the gain spectrum with and without the effect of interband relaxation. The peak wavelength of the PL spectrum is 764 nm. Due to the In carry-over effect, the interface between InGaP and AlGaAs is not abrupt. The performance of the laser diodes into which a thin GaAsP interlayer is inserted is better than those with no such interlayer. The threshold current is decreased from 560 to 450 mA, the slope efficiency is increased from 0.61 to 0.7 W/A, and the output power is increased from 370 to 940 mW.
Keyword：
Reprint Author's Address：
Email：
Source ：
Chinese Journal of Semiconductors
ISSN： 0253-4177
Year： 2006
Issue： 9
Volume： 27
Page： 1621-1624
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 10
Affiliated Colleges：
