Indexed by:
Abstract:
A method for calculating the extraction efficiency of light-emitting diodes is offered. The determinants of the extraction efficiency of tunneling-regenerated double-active-region (TRDAR) AlGaInP light-emitting diodes are investigated, including light escaping through the top surface, light loss due to absorption of diode bulk, light loss due to absorption of substrate and anode. The extraction efficiency of tunneling-regenerated double-active-region AlGaInP light-emitting diodes is calculated. The extraction efficiency of 5.24% and 9.16% for the top active region and the bottom active region are obtained respectively in TRDAR LED chips.
Keyword:
Reprint Author's Address:
Email:
Source :
Research and Progress of Solid State Electronics
ISSN: 1000-3819
Year: 2006
Issue: 1
Volume: 26
Page: 80-84
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 9
Affiliated Colleges: