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Author:

Hao, Tieying (Hao, Tieying.) | Feng, Shiwei (Feng, Shiwei.) (Scholars:冯士维) | Zheng, Xiang (Zheng, Xiang.) | Bai, Kun (Bai, Kun.)

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EI Scopus

Abstract:

The degradation mechanism of 808nm GaAs-based high-power laser diode bars (LDBs) with 6 single laser diodes was investigated using infrared thermography and photoemission microscopy. Over time, measurements of output power indicated that one of the 6 laser bars had a serious degradation of output power. Infrared imaging and photoemission microscopy revealed that solder voids during packaging resulted in premature failure due to high temperatures in the lasing region. The current reliability of LDB devices is compromised by these packaging defects. © 2020 IEEE.

Keyword:

III-V semiconductors Degradation Semiconducting gallium Gallium arsenide Thermography (imaging) High power lasers Semiconductor lasers Photoemission Diodes

Author Community:

  • [ 1 ] [Hao, Tieying]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China
  • [ 2 ] [Feng, Shiwei]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China
  • [ 3 ] [Zheng, Xiang]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China
  • [ 4 ] [Bai, Kun]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China

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Source :

Year: 2020

Page: 121-124

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 12

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