Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers using Co as a Sacrificial Catalyst Layer - Details

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Abstract：

Co　acts　as　both　an　etching　mask　and　a　catalyst　for　the　growth　of　grapheme,　high-quality　graphene　can　be　obtained　quickly　and　at　low　temperatures　for　transparent　electrode　applications　on　GaN　LEDs.　©　2020　OSA.

Keyword：

Cobalt III-V semiconductors Gallium nitride Transparent electrodes Light emitting diodes Graphene Catalysts Etching

Author Community：

[ 1 ] [Xiong, Fangzhu]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Dong, Yibo]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Wang, Le]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Du, Zaifa]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China

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Related Keywords：

Direct patterned growth of PECVD graphene transparent electrodes on GaN LED epiwafers using co as a sacrificial catalyst layer
2020，CLEO: Science and Innovations, CLEO_SI 2020
Metal-assisted Direct Growth of CVD Graphene on GaN as Transparent Electrodes
2022，29th International Display Workshops, IDW 2022
Direct Growth of Transparent Graphene Electrodes on GaN LEDs Using Metal Proximity Catalytic Effect
2021，2021 Conference on Lasers and Electro-Optics, CLEO 2021
Direct growth of transparent graphene electrodes on GaN LEDs using metal proximity catalytic effect
2021，CLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021

Source ：

ISSN： 1092-8081

Year： 2020

Volume： 2020-May

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 9

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信息科学技术学院本学院/部未明确归属的数据

化学与生命科学学院本学院/部未明确归属的数据

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