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Abstract：
This paper presents the electrical behavior of normally-off AlGaN/GaN HEMT under heavy ion irradiation based on technology computer aided design numerical simulation to better understand single-event burnout (SEB). Firstly, the effects of heavy ion impact at different locations on the device are simulated. Secondly, more complex radiation angles are introduced to find the effects of different angles on the electrical characteristics of the device. Finally, the most sensitive conditions with respect to SEB failure are obtained. © 2019 IEEE.
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Year： 2019
Page： 1546-1549
Language： English
Cited Count：
SCOPUS Cited Count： 7
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 10
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